Raman scattering of InAs/AlAs strained-layer superlattices

Raman-scattering study of GaP/InP strained-layer superlattices.

Strained-layer superlattices (SL's) made up of alternate GaP and InP layers constitute a system where the strain is symmetrized when grown on GaAs substrates. While both components present a large lattice mismatch to GaAs ( —3.6% GaP, +3.8% InP) giving rise to large biaxial deformations in the individual layers, the net value of strain in the whole SL is very small, thus favoring their stabilit...

Raman scattering of » As / AlAs strained - layer superlattices 15 OCTOBER 1989 - II

Strained-layer superlattices were the subject of much research work during recent years. In these arti6cial materials, together with the con6nement effect already present in lattice-matched systems, there is another factor, strain, which determines the electronic and phonon properties. As far as the phonon properties are concerned, the main effect of strain is an energy shift with respect to th...

VALENCE BAND STRUCTURE OF STRAINED-LAYER Si-Si0.5Ge0.5 SUPERLATTICES

We calculate the valence subband dispersion of Sio,5Ge,,5 Si strained layer structures grown on a Si (001) substrate and on a Si0,,5Ge0,25 buffer. We use the 6x6 Luttinger-Kohn Hamiltonian, including the effects both of strain and of the split-off band. The heavy-hole zone centre states are separated by over 60meV from the light-hole states and the highest valence subband has a low zone-centre ...

Structural characterization of Si,Ge, strained layer superlattices

Si,Ge, strained layer superlattice (SLS) structures were grown by molecular beam epitaxy on Ge$ii --x buffer layers on (100) Si substrates to determine the effects of buffer layer composition, SLS thickness ratio, and superlattice periodicity, on the overall quality of these structures. X-ray diffraction methods were used to determine how closely actual periodicities and compositions met target...

Electronic structure of strained-layer AlAs/InAs (001) superlattices.